AP20P02BF

-20V P-Channel Enhancement Mode MOSFET

AP20P02BF RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-to-Source breakdown voltage

VGS = 0V, ID = 250μA

-20

-22

—

V

RDS(on)

Static Drain-to-Source on-resistance

VGS =-4.5V, ID =-10A

—

12

18

mΩ

VGS =-2.5V, ID =-8.9A

—

18

22

VGS =-1.8V, ID =-4.5A

—

24

38

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250μA

-0.4

-1

V

IDSS

Drain-to-Source leakage current

VDS = -12V,VGS = 0V

—

—

-1

μA

IGSS

Gate-to-Source forward leakage

VGS = 8V

—

—

100

nA

VGS = -8V

—

—

-100

gFS

Forward Transconductance

VDS = -5V, ID =-10A

-3

—

—

S

Qg

Total gate charge

ID = -10A,

VDD=-6V,

VGS = -4.5V

—

21

—

nC

Qgs

Gate-to-Source charge

—

2.5

—

Qgd

Gate-to-Drain("Miller") charge

—

6

—

td(on)

Turn-on delay time

VGS=-4.5V,

VDD=-6V,

ID = -10A,

RGEN=6Ω

—

30

—

ns

tr

Rise time

—

48

—

td(off)

Turn-Off delay time

—

97

—

tf

Fall time

—

65

—

Ciss

Input capacitance

VGS = 0V VDS = -6V ƒ =

1MHz

—

2138

—

pF

Coss

Output capacitance

—

685

—

Crss

Reverse transfer capacitance

—

650

—

IS

Continuous Source Current (Body Diode)

MOSFET symbol showing

the integral reverse p-n

junction diode.

—

—

-12

A

ISM

Pulsed Source Current (Body Diode)

—

—

-28

A

VSD

Diode Forward Voltage

IS=-2A, VGS=0V

—

-0.77

-1.2

V

trr

Reverse Recovery Time

TJ = 25°C, IF =-10A, di/dt =

100A/μs

—

16

—

ns

Qrr

Reverse Recovery Charge

—

5.9

—

uC

Notes:

1、The maximum current rating is limited by bond-wires.

2、Repetitive rating; pulse width limited by max. junction temperature.

3、The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal resistance.

4、The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

5、These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=150°C.

-

0.6