AP20G04GD

40V N+P-Channel Enhancement Mode MOSFET

AP20G04GD REV1.1

永源微電子科技有限公司

P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-40

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -40V, VGS=0V

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -250μA

-1.0

-1.6

-2.5

V

RDS(on)

Static Drain-Source on-Resistance

VGS= -10V, ID= -6A

-

32

39

mΩ

VGS= -4.5V, ID= -5A

-

40

48

Ciss

Input Capacitance

VDS= -20V, VGS=0V,

f=1.0MHz

-

1244

-

pF

Coss

Output Capacitance

-

97

-

pF

Crss

Reverse Transfer Capacitance

-

80

-

pF

Qg

Total Gate Charge

VDS= -20V, ID= -5A,

VGS= -10V

-

23

-

nC

Qgs

Gate-Source Charge

-

4

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

4

-

nC

td(on)

Turn-on Delay Time

VDD= -20V, ID= -5A,

VGS= -10V, RGEN=2.5Ω

-

5

-

ns

tr

Turn-on Rise Time

-

2

-

ns

td(off)

Turn-off Delay Time

-

51

-

ns

tf

Turn-off Fall Time

-

29

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-21

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-60

A

trr

Reverse Recovery Time

TJ=25℃,

IF=10A,dI/dt=100A/μs

-

13

-

ns

Qrr

Reverse Recovery Charge

-

7

-

nC

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= -10A

-

-0.8

-1.2

V

Note :

1、The data tested by surface mo

unted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,I

AS=-10A

4、The power dissipation is limited by 150℃ junction temperature

5 、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.