AP20G03BDF datasheet(2/11 Pages) APME

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AP20G03BDF

30V N+P-Channel Enhancement Mode MOSFET

AP20G03BDF REV1.0

永源微電子科技有限公司

Description

The AP20G03BDF uses advanced Trench III technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =20A

RDS(ON) <12mΩ @ VGS=4.5V （Type：8.5mΩ）

VDS = -20V ID =-18.8A

RDS(ON) < 32mΩ @ VGS=-4.5V（Type：25mΩ）

Application

High Frequency Circuit

low-power consumption

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP20G03BDF

PDFN3*3-8L

AP20G03BDF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

-30

VGS

Gate-Source Voltage

±12

ID@TA=25

℃

Continuous Drain Current, VGS @ 10V1

-18.8

ID@TA=70

℃

Continuous Drain Current, VGS @ 10V1

16.2

-15.5

IDM

Pulsed Drain Current2

-54

EAS

Single Pulse Avalanche Energy3

PD@TA=25

℃

Total Power Dissipation4

3.5

TSTG

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

105

℃/W

RθJC

Thermal Resistance Junction-Case1

℃/W

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