AP15N02S

20V N-Channel Enhancement Mode MOSFET

AP15N02S RVE1.0

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

20

22

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

0.4

0.7

1.1

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS=4.5V, ID=25A

-

6.3

8.0

mΩ

VGS=2.5V, ID=10A

-

8.8

13

Ciss

Input Capacitance

VDS=10V, VGS=0V,

f=1.0MHz

-

1458

-

pF

Coss

Output Capacitance

-

238

-

pF

Crss

Reverse Transfer Capacitance

-

212

-

pF

Qg

Total Gate Charge

VDS=10V, ID=25A,

VGS=4.5V

-

19

-

nC

Qgs

Gate-Source Charge

-

3

-

nC

Qgd

Gate-

Drain(“Miller”) Charge

-

6.4

-

nC

td(on)

Turn-on Delay Time

VDS=10V,

ID=10A, RGEN=3Ω,

VGS=4.5V

-

10

-

ns

tr

Turn-on Rise Time

-

21

-

ns

td(off)

Turn-off Delay Time

-

39

-

ns

tf

Turn-off Fall Time

-

19

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

50

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

200

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=20A,dI/dt=100A/μs

-

25

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

20

-

nC

Notes:

1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2、EAS condition: TJ=25

℃, VDD=10V, VG=4.5V, L=0.5mH, RG=25Ω, IAS=12A

3、Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

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