AP15H10S

100V N+N-Channel Enhancement Mode MOSFET

AP15H10S REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

100

108

-

V

IDSS

Drain-Source Leakage Current

VDS=80V, VGS=0V

-

-

1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID =250μA

1.2

1.7

2.5

V

RDS(on)

Static Drain-Source On-Resistance

VGS=10V, ID=15A

-

43

m

53

Ω

VGS=4.5V, ID=10A

-

60

80

mΩ

gfs

Forward Threshold Voltage

VDS=10V, ID=20A

-

7.5

-

S

Rg

Gate Resistance

VDS = VGS=0V, f = 1.0MHz

-

1.75

-

Ω

Ciss

Input Capacitance

VDS=50V, VGS=0V,

f = 1.0MHz

-

390

-

pF

Coss

Output Capacitance

-

94

-

pF

Crss

Reverse Transfer Capacitance

-

3.3

-

pF

Qg

Total Gate Charge

VDS=50V, ID=10A,

VGS=10V

-

8.2

-

nC

Qgs

Gate-Source Charge

-

1.4

-

Qgd

Gate-Drain(“Miller”) Charge

-

2.1

-

td(on)

Turn-On Delay Time

VDS = 50V, ID = 10A,

RG = 3Ω, VGS=10V

-

4.2

-

ns

tr

Turn-On Rise Time

-

4.9

-

td(off)

Turn-Off Delay Time

-

13

-

tf

Turn-Off Fall Time

-

4.8

-

IS

Continuous Source Current

-

-

25

A

VSD

Diode Forward Voltage

IS=10A . VGS = 0V

-

0.75

1.2

V

trr

Reverse Recovery Time

ISD=10A, dlSD/dt=100A/μs

-

2.2

-

ns

Qrr

Reverse Recovery Charge

-

34.4

-

nC

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD=25V, VGS=10V, L=0.5mH, IAS=8.5A

4、The power dissipation is limited by 150°C junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.