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AP15G10GD bảng dữ liệu(PDF) 1 Page - A POWER MICROELECTRONICS

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AP15G10GD
100V N+P-Channel Enhancement Mode MOSFET
AP15G10GD RVE1.0
永源微電子科技有限公司
Description
The AP15G10GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS =100V ID =17.8A
RDS(ON) < 120mΩ @ VGS=10V （Type：85mΩ）
VDS = -100V ID =-12.8A
RDS(ON) < 290mΩ @ VGS=-10V （Type：235mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP15G10GD
TO-252-4L
AP15G10GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
100
-100
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
17.8
12.8
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
8.9
-7.5
A
IDM
Pulsed Drain Current2
52.5
-38.4
A
EAS
Single Pulse Avalanche Energy3
28
18
mJ
IAS
Avalanche Current
7
6
A
PD@TC=25℃
Total Power Dissipation4
23
21.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
5.4
℃
/W


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