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AP15G02DF bảng dữ liệu(PDF) 1 Page - A POWER MICROELECTRONICS

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AP15G02DF
20V N+P-Channel Enhancement Mode MOSFET
AP15G02DF REV1.0
永源微電子科技有限公司
Description
The AP15G02DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =15.5A
RDS(ON) < 35mΩ @ VGS=4.5V （Type：22mΩ）
VDS = -20V ID =-14.8A
RDS(ON) < 35mΩ @ VGS=-4.5V（Type：28mΩ）
Application
High Frequency Circuit
low-power consumption
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP15G02DF
PDFN3*3-8L
AP15G02DF XXX YYYY
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
20
-20
V
VGS
Gate-Source Voltage
±
12
±
12
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
15.5
-14.8
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
12.2
-11.5
A
IDM
Pulsed Drain Current2
48
-44
A
EAS
Single Pulse Avalanche Energy3
24
78
mJ
PD@TA=25℃
Total Power Dissipation4
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃
/W
RθJC
Thermal Resistance Junction-Case1
60
℃
/W


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