AP12P04S

-40V P-Channel Enhancement Mode MOSFET

AP12P04S RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-40

-44

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.023

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-30A

---

14

18

mΩ

VGS=-4.5V , ID=-20A

---

18

25

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID=-250uA

-1.0

-1.6

-2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

4.74

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=-40V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=-40V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-4.5V ,

ID=-12A

---

25

---

nC

Qgs

Gate-Source Charge

---

11

---

Qgd

Gate-Drain Charge

---

9.5

---

Td(on)

Turn-On Delay Time

VDD =-15V, RL=15Ω

ID =-1A, VGEN =-10V,

RG =6Ω

---

48

---

ns

Tr

Rise Time

---

24

---

Td(off)

Turn-Off Delay Time

---

88

---

Tf

Fall Time

---

9.6

---

Ciss

Input Capacitance

VDS=-20V , VGS=0V , f=1MHz

---

2760

---

pF

Coss

Output Capacitance

---

260

---

Crss

Reverse Transfer Capacitance

---

85

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-40

A

ISM

Pulsed Source Current2,5

---

---

-90

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.3

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.