AP9N50NF

500V N-Channel Enhancement Mode MOSFET

AP9N50NF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

500

535

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=500V, VGS=0V,TJ=25

℃

-

-

1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±30V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

2

3

4

V

RDS(on)

Static Drain-Source on-Resistance

VGS =10V, ID =4.5A

-

630

720

mΩ

Ciss

Input Capacitance

VDS=25V, VGS=0V, f=1.0MHz

-

1100

-

pF

Coss

Output Capacitance

-

106

-

pF

Crss

Reverse Transfer Capacitance

-

32

-

pF

Qg

Total Gate Charge

VDD=400V, ID=9A,

VGS=10V

-

19.5

-

nC

Qgs

Gate-Source Charge

-

4.6

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

7.1

-

nC

td(on)

Turn-on Delay Time

VDD=250V, ID=9A,

RG=25Ω

-

24

-

ns

tr

Turn-on Rise Time

-

44

-

ns

td(off)

Turn-off Delay Time

-

55

-

ns

tf

Turn-off Fall Time

-

35

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

9

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

36

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, ISD=9A

-

-

1.4

V

trr

Reverse Recovery Time

VGS=0V, IS=9A,

di/dt=100A/μs

-

332

-

ns

Qrr

Reverse Recovery Charge

-

3.5

-

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . IAS=6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.