AP10N10DF

100V N-Channel Enhancement Mode MOSFET

AP10N10DF REV1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

100

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=100V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

1.5

2.5

V

RDS(on)

Static Drain-Source on-Resistancenote3

VGS=10V, ID=5A

-

85

100

mΩ

VGS=4.5V, ID=3A

-

96

125

mΩ

Ciss

Input Capacitance

VDS=50V, VGS=0V,

f=1.0MHz

-

547

-

pF

Coss

Output Capacitance

-

30

-

pF

Crss

Reverse Transfer Capacitance

-

8

-

pF

Qg

Total Gate Charge

VDS=50V, ID=2A,

VGS=10V

-

20

-

nC

Qgs

Gate-Source Charge

-

2.8

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

4

-

nC

td(on)

Turn-on Delay Time

VDS=50V, ID=3A,

RG=1.8Ω, VGS=10V

-

6

-

ns

tr

Turn-on Rise Time

-

7

-

ns

td(off)

Turn-off Delay Time

-

21

-

ns

tf

Turn-off Fall Time

-

3

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

15

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

40

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=10A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=10A, dI/dt=100A/μs

-

22

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

29

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150

℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.