AP8G15NF datasheet(1/10 Pages) APME

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AP8G15NF

150V N+P-Channel Enhancement Mode MOSFET

AP8G15NF REV1.0

永源微電子科技有限公司

Description

The AP8G15NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 150V ID =5.5A

RDS(ON) < 320mΩ @ VGS=10V （Type：250mΩ）

VDS = -150V ID =-6.2A

RDS(ON) < 320mΩ @ VGS=-10V （Type：285mΩ）

Application

Wireless charging

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP8G15NF

PDFN5*6-8L

AP8G15NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

150

-150

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

5.5

-6.2

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

2.8

-4.9

A

IDM

Pulsed Drain Current2

13

-18

A

EAS

Single Pulse Avalanche Energy3

289

478

mJ

IAS

Avalanche Current

3

10

A

PD@TC=25℃

Total Power Dissipation4

46

52

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

25.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

1.4

℃

/W

Số phần tương tự - AP8G15NF

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