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AP8G06S bảng dữ liệu(PDF) 1 Page - A POWER MICROELECTRONICS

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Giải thích chi tiết về linh kiện  60V NP-Channel Enhancement Mode MOSFET
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AP8G06S
60V N+P-Channel Enhancement Mode MOSFET
AP8G06S RVE1.0
永源微電子科技有限公司
Description
The AP8G06S uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 60V ID =8.5A
RDS(ON) < 52mΩ @ VGS=10V （Type：38mΩ）
VDS = -60V ID =-7.7A
RDS(ON) < 100mΩ @ VGS=-10V （Type：80mΩ）
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP8G06S
SOP-8L
AP8G06S XXX YYYY
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Channel
P-Channel
VDS
Drain-Source Voltage
60
-60
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
8.5
-7.7
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
4.0
-3
A
IDM
Pulsed Drain Current2
20
-14
A
EAS
Single Pulse Avalanche Energy3
22
28.8
mJ
IAS
Avalanche Current
21
-24
A
PD@TA=25℃
Total Power Dissipation4
2
2
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃
/W
RθJC
Thermal Resistance Junction-Case1
62.5
℃
/W


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