AP8G04S

40V N+P-Channel Enhancement Mode MOSFET

AP8G04S REV1.1

永源微電子科技有限公司

N-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

40

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=40V, VGS=0V

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

1.5

2.5

V

RDS(on)

Static Drain-Source on-Resistance

note3

VGS=10V, ID=8A

-

20

28

mΩ

VGS=4.5V, ID=5A

-

25

35

mΩ

Ciss

Input Capacitance

VDS=20V, VGS=0V,

f=1.0MHz

-

633

-

pF

Coss

Output Capacitance

-

67

-

pF

Crss

Reverse Transfer Capacitance

-

58

-

pF

Qg

Total Gate Charge

VDS=20V, ID=8A,

VGS=10V

-

12

-

nC

Qgs

Gate-Source Charge

-

3.2

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

3.1

-

nC

td(on)

Turn-on Delay Time

VDD= 20V, RL =2.5Ω

VGS=10V,RREN =3Ω

-

4

-

ns

tr

Turn-on Rise Time

-

3

-

ns

td(off)

Turn-off Delay Time

-

15

-

ns

tf

Turn-off Fall Time

-

2

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

8

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

32

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= 8A

-

-

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=8A

4、The power dissipation is limited by 150℃ junction temperature

5 、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.