AP8G02BLI datasheet(2/11 Pages) APME

2 / 11 page

AP8G02BLI

20V N+P-Channel Enhancement Mode MOSFET

AP8G02BLI REV1.0

永源微電子科技有限公司

Description

The AP8G02BLI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =8.5A

RDS(ON) < 28mΩ @ VGS=4.5V （Type：24mΩ）

VDS = -20V ID =-7.6A

RDS(ON) < 35mΩ @ VGS=-4.5V（Type：29mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP8G02BLI

SOT23-6L

AP8G02BLI

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

-20

VGS

Gate-Source Voltage

±12

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

8.5

-7.6

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

6.2

-5.3

IDM

Pulsed Drain Current2

-30

EAS

Single Pulse Avalanche Energy3

PD@TA=25℃

Total Power Dissipation4

1.5

TSTG

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃

RθJC

Thermal Resistance Junction-Case1

℃

AP8G02BLI bảng dữ liệu(PDF) 2 Page - A POWER MICROELECTRONICS

AP8G02BLI bảng dữ liệu(HTML) 2 Page - A POWER MICROELECTRONICS

Html Pages

1 2 3 4 5 6 7 8 9 10 11

bảng dữ liệu tải về

Link URL