AP6G02LI

20V N+P-Channel Enhancement Mode MOSFET

AP6G02LI REV1.0

永源微電子科技有限公司

P-Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = -250µA, VGS = 0V

-20

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V

-

-

1.0

µA

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = -250µA

-0.5

-0.7

-1.0

V

RDS(ON)

Static Drain-Source ON-Resistance(3)

VGS = -4.5V, ID = -4A

-

35

40

mΩ

VGS = -2.5V, ID = -3A

-

40

66

mΩ

Ciss

Input Capacitance

VGS = 0V, VDS = -10V,

f = 1MHz

-

534

-

pF

Coss

Output Capacitance

-

62

-

pF

Crss

Reverse Transfer Capacitance

-

50

-

pF

Qg

Total Gate Charge

VGS = 0 to -4.5V VDS = -10V,

ID = -2A

-

5.6

-

nC

Qgs

Gate Source Charge

-

1

-

nC

Qgd

Gate Drain("Miller") Charge

-

1

-

nC

td(on)

Turn-On DelayTime

VGS = -4.5V, VDD = -10V

ID= -2A, RGEN = 3Ω

-

5

-

ns

tr

Turn-On Rise Time

-

21

-

ns

td(off)

Turn-Off DelayTime

-

110

-

ns

tf

Turn-Off Fall Time

-

239

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-3

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-12

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = -4.2A

-

-

-1.2

V

trr

Body Diode Reverse Recovery Time

IF = -2A, di/dt = 100A/us

-

64

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

10

-

nC

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The power dissipation is limited by 150℃ junction temperature

4

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.