AP5N65P-B datasheet(1/9 Pages) APME

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AP5N65FIPIT-B

650V N-Channel Enhancement Mode MOSFET

AP5N65F/P/T-B REV1.0

永源微電子科技有限公司

Description

The AP5N65F/P/T is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 650V ID =5A

RDS(ON) < 2.4Ω @ VGS=10V （Type：2.0Ω）

Application

Uninterruptible Power Supply(UPS)

LED

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP5N65F-B

TO-220F-3L

AP5N65F-B XXX YYYY

1000

AP5N65P-B

TO-220-3L

AP5N65P-B XXX YYYY

1000

AP5N65T-B

TO-263-3L

AP5N65T-B XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage (VGS = 0V)

650

V

ID

Continuous Drain Current

5

A

IDM

Pulsed Drain Current

(note1)

2.5

A

VGS

Gate-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy (note2)

80

mJ

IAR

Avalanche Current (note1)

16

A

EAR

Repetitive Avalanche Energy note1)

4.5

mJ

PD

Power Dissipation (TC = 25ºC)

35

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

ºC

RthJC

Thermal Resistance, Junction-to-Case

5.1

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

62.5

ºC/W

Số phần tương tự - AP5N65P-B

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