AP4N80DIY

800V N-Channel Enhancement Mode MOSFET

AP4N80D/Y REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-source Breakdown Voltage

VGS=0V, ID=250UA

800

870

V

VGS(TH)

Gate Threshold Voltage

VGS=VDS, ID=250uA

3.0

4.0

5.0

V

IDSS

Drain-source Leakage Current

VDS=800V, VGS=0V, Tj=25

℃

1

uA

VDS=640V, VGS=0V, Tj=125

℃

10

uA

gfs

Forward Transconductance

VDS=15V, ID=2.0A

2.5

S

IGSS

Gate-body Leakage Current

VGS =±30V

±100

nA

RDS(ON)

Static Drain-source On Resistance

VGS=10V, ID=2.0A

2.5

2.8

Ω

Ciss

Input Capacitance

VGS=0V, VDS=25V F=1.0MHZ

700

pF

Coss

Output Capacitance

58

pF

Crss

Reverse transfer Capacitance

5

pF

Td(on)

Turn-on Delay Time

VDD=400V, ID =4.0A

RG=25Ω

16

ns

Tr

Rise Time

14

ns

Td(off)

Turn -Off Delay Time

40

ns

Tf

Fall Time

12

ns

Qg

Total Gate Charge

ID=4.0A, VDS=640V

VGS=10V

17.4

nC

Qgs

Gate-to-Source Charge

4.8

nC

Qgd

Gate-to-Drain Charge

5.4

nC

IS

Continuous Diode Forward

Current

4.0

A

VSD

Diode Forward Voltage

Tj=25°C, Is=4.0A VGS =0V

1.4

V

trr

Reverse Recovery Time

Tj=25°C, If=4.0A di/dt=100A/μs

250

ns

Qrr

Reverse Recovery Charge

1.5

uC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . IAS = 4.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.