AP1N02AF datasheet(1/7 Pages) APME

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AP1N02AF

20V N-Channel Enhancement Mode MOSFET

AP1N02AF REV1.0

永源微電子科技有限公司

Description

The AP1N02AF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS =20V ID =0.9A

RDS(ON) < 250mΩ @ VGS=4.5V （Type：135mΩ）

ESD=2KV HBM

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP1N02AF

DFN1.0*0.6-3L

1N02

3000

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±10

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

0.9

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

0.6

A

IDM

Pulsed Drain Current

3.6

A

PD@TC=25

℃

Power Dissipation

0.23

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

℃

RθJA

Thermal Resistance Junction-Ambient 1

543

℃/W

Số phần tương tự - AP1N02AF

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