NAND08GR3B2C datasheet(21/69 Pages) NUMONYX

21 / 69 page

NAND04G-B2D, NAND08G-BxC

Command set

21/69

Command set

All bus write operations to the device are interpreted by the command interface. The

commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when

the command Latch Enable signal is high. Device operations are selected by writing specific

commands to the Command Register. The two-step command sequences for program and

erase operations are imposed to maximize data security.

Table 10 summarizes the commands.

Table 10.

Commands

Command(1)

Commands in bold are referring to ONFI 1.0 specifications.

Bus write operations

Commands

accepted

during busy

1st cycle

2nd cycle

3rd cycle

4th cycle

Read

00h

30h

–

Random Data Output

05h

E0h

–

Cache Read (sequential)

31h

–

Enhanced Cache Read (random)

00h

31h

–

Exit Cache Read

3Fh

–

Yes(2)

Only during cache read busy.

Page Program

(sequential input default)

80h

10h

–

Random Data Input

85h

–

Multiplane Page Program(3)

80h

11h

81h

10h

Multiplane Page Program

80h

11h

80h

10h

Copy Back Read

00h

35h

–

Copy Back Program

85h

10h

–

Multiplane Copy Back Program(3)

Command maintained for backward compatibility.

85h

11h

81h

10h

Multiplane Copy Back Program

85h

11h

85h

10h

Block Erase

60h

D0h

–

Multiplane Block Erase(3)

60h

D0h

–

Multiplane Block Erase

60h

D1h

60h

D0h

Reset

FFh

–

Yes

Read Electronic Signature

90h

–

Read Status Register

70h

–

Yes

Read Status Enhanced

78h

–

Yes

Read Parameter Page

ECh

–

Read EDC Status Register

7Bh

–

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