AT45DB321E datasheet(22/80 Pages) RENESAS

22 / 80 page

DS-AT45DB321E-8784 Rev. N

Page 22

9/1/23

AT45DB321E Datasheet

7.9

Sector Erase

The Sector Erase command can be used to individually erase any sector in the main memory.

The main memory array is comprised of 64 sectors, and only one sector can be erased at a time. To perform an

erase of Sector 0a or Sector 0b with the standard DataFlash page size (528 bytes), an opcode of 7Ch must be

clocked into the device followed by three address bytes comprised of one dummy bit, 10 page address bits (PA12

- PA3), and 13 dummy bits. To perform a Sector 1-63 erase, an opcode of 7Ch must be clocked into the device

followed by three address bytes comprised of one dummy bit, six page address bits (PA12 - PA7), and 17 dummy

bits.

To perform a Sector 0a or Sector 0b erase with the binary page size (512 bytes), an opcode of 7Ch must be

clocked into the device followed by three address bytes comprised of two dummy bits, 10 page address bits (A21

- A12), and 12 dummy bits. To perform a Sector 1-63 erase, an opcode of 7Ch must be clocked into the device

followed by two dummy bits, six page address bits (A21 - A16), and 16 dummy bits.

The page address bits are used to specify any valid address location within the sector to be erased. When a

low-to high transition occurs on the CS pin, the device erases the selected sector. The erase operation is internally

self-timed and takes place in a maximum time of tSE. During this time, the RDY/BUSY bit in the Status Register

indicates that the device is busy.

The device also incorporates an intelligent algorithm that can detect when a byte location fails to erase properly. If

an erase error arises, it is indicated by the EPE bit in the Status Register.

Table 3. Sector Erase Addressing

PA12/

A21

PA11/

A20

PA10/

A19

PA9/A

PA8/A

PA7/A

PA6/A

PA5/A

PA4/A

PA3/A

PA2/A

PA1/A

PA0/A

Sector

0000000

0000001

XXXXXXX

•

XXXXXXX

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