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s Figure 4 SLD234VL Reliability Characteristics
s Figure 1 SLD234VL Chip Structure (Real Index Structure)
0
100
200
50
0
100
Pulse
150
Current [mA]
CW
-45
-30
-15
0
30
45
15
Horizontal direction
Angle [deg]
Vertical direction
0
120
20
°C80°C
100
80
60
40
20
0
100
150
50
200
Current [mA]
I-L (Pulse)
0
200
150
100
50
0
400
800
600
200
1000
Operation Time [H]
Tc = 75
°C, Po = 80mW (Pulse Width 600ns, duty 50%)
s Figure 2-1 SLD234VL I-L Characteristics
s Figure 2-2 SLD234VL Far Field Pattern
s Figure 3 SLD234VL Temperature Characteristics
s Figure 2-3 SLD234VL Spectrum
775
785
790
780
795
Wavelength [nm]
GaAs substrate
n-AlGaAs
Active layer
p-AlGaAs
n-AlGaAs
(low absorption layer)
p-GaAs
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