M28W640HCB datasheet(7/72 Pages) NUMONYX

7 / 72 page

M28W640HCT, M28W640HCB

Description

7/72

Description

The M28W640HCT and M28W640HCB are 64 Mbit (4 Mbit x 16) non-volatile Flash

memories that can be erased electrically at block level and programmed in-system on a

word-by-word basis using a 2.7 V to 3.6 V VDD supply. An optional 12V VPP power supply is

provided to speed up customer programming.

The devices feature an asymmetrical blocked architecture. They have an array of 135

blocks: 8 parameter blocks of 4 Kwords and 127 main blocks of 32 Kwords. The

M28W640HCT has the parameter blocks at the top of the memory address space while the

M28W640HCB locates the parameter blocks starting from the bottom. The memory maps

are shown in Figure 4: Block addresses.

The M28W640HCT and M28W640HCB feature an instant, individual block locking scheme

that allows any block to be locked or unlocked with no latency, enabling instant code and

data protection. All blocks have three levels of protection. They can be locked and locked-

down individually preventing any accidental programming or erasure. There is an additional

hardware protection against program and erase. When VPP ≤VPPLK all blocks are protected

against program or erase. All blocks are locked at power-up.

Each block can be erased separately. Erase can be suspended in order to perform either

read or program in any other block and then resumed. Program can be suspended to read

data in any other block and then resumed. Each block can be programmed and erased over

100,000 cycles.

The device includes a 192-bit protection register to increase the protection of a system

design. The protection register is divided into a 64-bit segment and a 128-bit segment. The

64-bit segment contains a unique device number written by Numonyx, while the second one

is one-time-programmable by the user. The user programmable segment can be

permanently protected. Figure 5, shows the protection register memory map.

Program and Erase commands are written to the command interface of the memory. An on-

chip Program/Erase controller takes care of the timings necessary for program and erase

operations. The end of a program or erase operation can be detected and any error

conditions identified. The command set required to control the memory is consistent with

JEDEC standards.

The memory is offered in TSOP48 (12 × 20 mm) and TFBGA48 (6.39 × 10.5 mm, 0.75 mm

pitch) packages and is supplied with all the bits erased (set to ’1’).

M28W640HCB bảng dữ liệu(PDF) 7 Page - Numonyx B.V