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PDP8974A bảng dữ liệu(PDF) 2 Page - Potens Semiconductor Corp. |
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PDP8974A bảng dữ liệu(HTML) 2 Page - Potens Semiconductor Corp. |
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2 / 5 page ![]() Potens semiconductor corp. Ver.1.02 2 PDP8974A 80V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 ℃ --- --- 1 uA VDS=64V , VGS=0V , TJ=85 ℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 3.7 4.4 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 3 4 V gfs Forward Transconductance VDS=10V , ID=5A --- 15 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=40V , VGS=10V , ID=10A --- 95.5 140 nC Qgs Gate-Source Charge3 , 4 --- 23.5 35 Qgd Gate-Drain Charge3 , 4 --- 32 48 Td(on) Turn-On Delay Time3 , 4 VDD=40V , VGS=10V , RG=6 ID=1A --- 22 45 ns Tr Rise Time3 , 4 --- 15 30 Td(off) Turn-Off Delay Time3 , 4 --- 40 80 Tf Fall Time3 , 4 --- 19 38 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 5510 7160 pF Coss Output Capacitance --- 970 1260 Crss Reverse Transfer Capacitance --- 35 70 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.5 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 110 A ISM Pulsed Source Current --- --- 220 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 ℃ --- --- 1 V trr Reverse Recovery Time VGS=0V, IS=10A , dI/dt=100A/µs , TJ=25 ℃ --- 55 --- nS Qrr Reverse Recovery Charge --- 162 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=95A.,RG=25 ,Starting T J =25 ℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (T J=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings |
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