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PDP8974A bảng dữ liệu(PDF) 2 Page - Potens Semiconductor Corp.

tên linh kiện PDP8974A
Giải thích chi tiết về linh kiện  80V N-Channel MOSFETs
PDF  5 Pages
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nhà sản xuất  POTENS [Potens Semiconductor Corp.]
Trang chủ  http://potens-semi.com/en/
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PDP8974A bảng dữ liệu(HTML) 2 Page - Potens Semiconductor Corp.

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Potens semiconductor corp.
Ver.1.02
2
PDP8974A
80V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
80
---
---
V
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25
℃
---
---
1
uA
VDS=64V , VGS=0V , TJ=85
℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=20V , VDS=0V
---
---
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=20A
---
3.7
4.4
m
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
2
3
4
V
gfs
Forward Transconductance
VDS=10V , ID=5A
---
15
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=40V , VGS=10V , ID=10A
---
95.5
140
nC
Qgs
Gate-Source Charge3 , 4
---
23.5
35
Qgd
Gate-Drain Charge3 , 4
---
32
48
Td(on)
Turn-On Delay Time3 , 4
VDD=40V , VGS=10V , RG=6
ID=1A
---
22
45
ns
Tr
Rise Time3 , 4
---
15
30
Td(off)
Turn-Off Delay Time3 , 4
---
40
80
Tf
Fall Time3 , 4
---
19
38
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
5510
7160
pF
Coss
Output Capacitance
---
970
1260
Crss
Reverse Transfer Capacitance
---
35
70
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.5
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
110
A
ISM
Pulsed Source Current
---
---
220
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25
℃
---
---
1
V
trr
Reverse Recovery Time
VGS=0V, IS=10A ,
dI/dt=100A/µs , TJ=25
℃
---
55
---
nS
Qrr
Reverse Recovery Charge
---
162
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=95A.,RG=25
,Starting T
J
=25
℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (T
J=25
℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings



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