HSL278 datasheet(2/5 Pages) RENESAS

tên linh kiện	HSL278

Giải thích chi tiết về linh kiện	Silicon Schottky Barrier Diode for Detector

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HSL278

Rev.1.00 Apr 20, 2005 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Repetitive peak reverse voltage

VRRM

Reverse voltage

Average rectified current

Non-Repetitive peak forward surge current

IFSM *

200

Peak forward current

IFM

150

Junction temperature

125

°C

Storage temperature

Tstg

−55 to +125

°C

Note

: 10 ms sine wave 1 pulse

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

VF1



0.30

IF = 1 mA

Forward voltage

VF2



0.95

IF = 30 mA

Reverse current



700

VR = 10 V

Capacitance



1.5

VR = 1 V, f = 1 MHz

ESD-Capability *



100



C = 200 pF, RL = 0 Ω, Both forward

and reverse direction 1 pulse.

Notes

: 1. Failure criterion ; IR ≥ 1.4 µA at VR =10 V

2. Please do not use the soldering iron due to avoid high stress to the EFP package.

3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as

unquestioned. Please kindly consider soldering nature.

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