STPS20120C datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPS20120C

4/9

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220AB & I2PAK)

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

δ=tp/T

t (s)

Single pulse

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

δ=tp/T

t (s)

Single pulse

Figure 9.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

Figure 11.

Forward voltage drop versus

forward current (per diode)

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

100

110

120

I (mA)

V (V)

T =125°C

T =25°C

T =50°C

T =75°C

T =100°C

T =150°C

100

1000

100

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

(A)

(V)

T =25°C

(maximum values)

T =125°C

(maximum values)

T =125°C

(typical values)

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