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TLP3021 bảng dữ liệu(PDF) 3 Page - Toshiba Semiconductor |
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TLP3021 bảng dữ liệu(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page ![]() TLP3020, TLP3021, TLP3022, TLP3023 2007-10-01 3 Recommended Operating Conditions CHARACTERISTICS SYMBOL MIN TYP. MAX UNIT Supply Voltage VAC ⎯ ⎯ 120 Vac Forward Current IF* 15 20 25 mA Peak On-Stage Current ITP ⎯ ⎯ 1 A Operating Temperature Topr −25 ⎯ 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. *: In the case of TLP3022 Individual Electrical Characteristics (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Forward Voltage VF IF=10mA 1.0 1.15 1.3 V Reverse Current IR VR=5V ⎯ ⎯ 10 μA Capacitance CT V=0, f=1MHz ⎯ 10 ⎯ pF Peak Off-State Current IDRM VDRM=400V ⎯ 10 100 nA Peak On-Stage Voltage VTM ITM=100mA ⎯ 1.7 3.0 V Holding Current IH ⎯ ⎯ 0.6 ⎯ mA Critical Rate of Rise of Off- State Voltage dv / dt Vin=120Vrms, Ta=85°C (Fig.1) 200 500 ⎯ V/ μs Critical Rate of Rise of Commutating Voltage dv / dt(c) Vin=30Vrms, IF=15mA (Fig.1) ⎯ 0.2 ⎯ V/ μs Coupled Electrical Characteristics (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT TLP3020 ⎯ ⎯ 30 TLP3021 ⎯ ⎯ 15 TLP3022 ⎯ 5 10 Trigger LED Current TLP3023 IFT VT=3V ⎯ ⎯ 5 mA Capacitance Input to Output CS VS=0, f=1MHz ⎯ 0.8 ⎯ pF Isolation Resistance RS VS=500V (R.H. ≤ 60%) 5 ×10 10 10 14 ⎯ Ω AC, 1 minute ⎯ ⎯ Vrms AC, 1 second (in oil) ⎯ 10000 ⎯ Isolation Voltage BVS DC, 1 minute (in oil) ⎯ 10000 ⎯ Vdc Fig. 1 dv/dt TEST CIRCUIT |
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