Potens semiconductor corp.

Ver.1.02

2

PDD4909

40V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=

-250μA

-40

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.05

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=

-40V , VGS=0V , TJ=25

℃

---

---

-1

μA

VDS=

-32V , VGS=0V , TJ=125

℃

---

---

-10

μA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=

-10V , ID=-10A

---

37

45

m



VGS=

-4.5V , ID=-6A

---

57

68

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID=

-250μA

-1.2

-1.6

-2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

5

---

mV/

℃

gfs

Forward Transconductance

VDS=

-10V , ID=-5A

---

7

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3,4

VDS=

-20V , VGS=-4.5V , ID=-5A

---

8.2

16

nC

Qgs

Gate-Source Charge3,4

---

3.0

6

Qgd

Gate-Drain Charge3,4

---

2.5

5

Td(on)

Turn-On Delay Time3,4

VDD=

-20V , VGS=-10V , RG=6

ID=

-1A

---

6.3

12

ns

Tr

Rise Time3,4

---

7.2

14

Td(off)

Turn-Off Delay Time3,4

---

46

80

Tf

Fall Time3,4

---

14

27

Ciss

Input Capacitance

VDS=

-25V , VGS=0V , F=1MHz

---

825

1480

pF

Coss

Output Capacitance

---

68

130

Crss

Reverse Transfer Capacitance

---

50

100

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-16

A

ISM

Pulsed Source Current

---

---

-32

A

VSD

Diode Forward Voltage

VGS=0V , IS=

-1A , TJ=25

℃

---

---

-1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=25V,VGS=10V,L=0.1mH,IAS=25A., Starting TJ=25

℃

3.

The data tested by pulsed , pulse width ≦ 300

μs , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings