Potens semiconductor corp.

Ver.1.00

2

PDD2363C

20V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-20

---

---

V

IDSS

Drain-Source Leakage Current

VDS=-20V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-16V , VGS=0V , TJ=125℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=±10V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=-4.5V , ID=-15A

---

7

8.4

m



VGS=-2.5V , ID=-10A

---

9.6

12

VGS=-1.8V , ID=-8A

---

14

18

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-0.3

-0.6

-1

V

gfs

Forward Transconductance

VDS=-10V , IS=-3A

---

15

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=-10V , VGS=-4.5V , ID=-30A

---

30

45

nC

Qgs

Gate-Source Charge3 , 4

---

4.7

7.1

Qgd

Gate-Drain Charge3 , 4

---

9

13.5

Td(on)

Turn-On Delay Time3 , 4

VDD=-10V , VGS=-4.5V , RG=6



ID=-30A

---

15

23

nS

Tr

Rise Time3 , 4

---

20

30

Td(off)

Turn-Off Delay Time3 , 4

---

30

55

Tf

Fall Time3 , 4

---

25

38

Ciss

Input Capacitance

VDS=-10V , VGS=0V , F=1MHz

---

3300

5000

pF

Coss

Output Capacitance

---

420

630

Crss

Reverse Transfer Capacitance

---

370

560

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

5

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-60

A

ISM

Pulsed Source Current

---

---

-120

A

VSD

Diode Forward Voltage

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=-25V,VGS=-10V,L=0.1mH,IAS=-56A.,Starting TJ=25℃

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings