XP3P080N

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Capable of 2.5V Gate Drive

BVDSS

-30V

▼ Small Package Outline

RDS(ON)

80mΩ

▼ Surface Mount Device

ID

-3.2A

▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25

oC(unless otherwise specified)

Symbol

Units

VDS

V

VGS

V

ID@TA=25℃

A

ID@TA=70℃

A

IDM

A

PD@TA=25℃

W

TSTG

℃

TJ

℃

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

3

100

℃/W

-55 to 150

Thermal Data

Parameter

Total Power Dissipation

3

Operating Junction Temperature Range

Storage Temperature Range

Halogen-Free Product

Drain Current

3, V

GS @ 4.5V

-2.6

Pulsed Drain Current

1

-10

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

3, V

GS @ 4.5V

202310131YAGEO

1

Rating

- 30

+12

-3.2

-55 to 150

1.25

D

G

S

SOT-23S

G

D

S

XP3P080 series are innovated design and silicon process

technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The SOT-23S package is widely preferred for commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.