XP3P010M datasheet(4/8 Pages) YAGEO

tên linh kiện	XP3P010M

Giải thích chi tiết về linh kiện	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	YAGEO [YAGEO Corporation]

Trang chủ	http://www.yageo.com

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4 / 8 page

XP3P010M

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

2.01E+09

Fig 11. Transfer Characteristics

Fig 12. Drain Current v.s. Ambient Temperature

406080

Q G , Total Gate Charge (nC)

I D =-8 A

V DS = -15V

2000

4000

6000

8000

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Pulse Width (s)

PDM

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=125

oC/W

0.01

0.1

100

0.01

0.1

100

-V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

Operation in this area

limited by RDS(ON)

100

125

150

T A , Ambient Temperature (

o C )

0123

456

-V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS = -5V

T j = -55

o C

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