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PDC6959X bảng dữ liệu(PDF) 2 Page - Potens Semiconductor Corp.

tên linh kiện PDC6959X
Giải thích chi tiết về linh kiện  60V P-Channel MOSFETs
PDF  6 Pages
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nhà sản xuất  POTENS [Potens Semiconductor Corp.]
Trang chủ  http://potens-semi.com/en/
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PDC6959X bảng dữ liệu(HTML) 2 Page - Potens Semiconductor Corp.

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Potens semiconductor corp.
Ver.1.00
2
PDC6959X
60V P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250µA
-60
---
---
V
IDSS
Drain-Source Leakage Current
VDS=
-60V , VGS=0V , TJ=25℃
---
---
-1
µA
VDS=
-48V , VGS=0V , TJ=125℃
---
---
-10
µA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-10V , ID=-25A
---
10
12
m
VGS=
-4.5V , ID=-12A
---
12.3
16
m
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID=
-250µA
-1.2
-1.6
-2.5
V
gfs
Forward Transconductance
VDS=
-10V , ID=-3A
---
16
---
S
Dynamic and switching Characteristics3
Qg
Total Gate Charge
VDS=
-30V , VGS=-10V , ID=-35A
---
106
160
nC
Qgs
Gate-Source Charge
---
18
30
Qgd
Gate-Drain Charge
---
8.8
15
Td(on)
Turn-On Delay Time
VDD=
-30V , VGS=-10V , RG=6
ID=
-35A
---
15
25
ns
Tr
Rise Time
---
20
30
Td(off)
Turn-Off Delay Time
---
40
60
Tf
Fall Time
---
50
75
Ciss
Input Capacitance
VDS=
-30V , VGS=0V , F=1MHz
---
5600
8400
pF
Coss
Output Capacitance
---
300
450
Crss
Reverse Transfer Capacitance
---
250
380
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-70
A
ISM
Pulsed Source Current
---
---
-140
A
VSD
Diode Forward Voltage
VGS=0V , IS=
-1A , TJ=25℃
---
---
-1
V
Trr
Reverse Recovery Time
VR=-50V, IS=
-10A
dI/dt=100A/µs, TJ=25℃
---
50
---
ns
Qrr
Reverse Recovery Charge
---
45
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=-25V,VGS=-10V,L=0.1mH,IAS=-77A.,RG=25,Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (T
J=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings



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