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STM32F427AI bảng dữ liệu(PDF) 106 Page - STMicroelectronics |
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STM32F427AI bảng dữ liệu(HTML) 106 Page - STMicroelectronics |
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106 / 240 page ![]() Electrical characteristics STM32F427xx STM32F429xx 106/240 DS9405 Rev 12 Table 28. Typical and maximum current consumptions in Standby mode Symbol Parameter Conditions Typ(1) Max(2) Unit TA = 25 °C TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.7 V VDD= 2.4 V VDD = 3.3 V VDD = 3.6 V IDD_STBY Supply current in Standby mode Backup SRAM ON, low-speed oscillator (LSE) and RTC ON 2.80 3.00 3.60 7.00 19.00 36.00 µA Backup SRAM OFF, low- speed oscillator (LSE) and RTC ON 2.30 2.60 3.10 6.00 16.00 31.00 Backup SRAM ON, RTC and LSE OFF 2.30 2.50 2.90 6.00(3) 18.00(3) 35.00(3) Backup SRAM OFF, RTC and LSE OFF 1.70 1.90 2.20 5.00(3) 15.00(3) 30.00(3) 1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by an additional 1.2 µA. 2. Evaluated by characterization, not tested in production unless otherwise specified. 3. Based on characterization, tested in production. Table 29. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Backup SRAM ON, low-speed oscillator (LSE) and RTC ON 1.28 1.40 1.62 6 11 µA Backup SRAM OFF, low-speed oscillator (LSE) and RTC ON 0.66 0.76 0.97 3 5 Backup SRAM ON, RTC and LSE OFF 0.70 0.72 0.74 5 10 Backup SRAM OFF, RTC and LSE OFF 0.10 0.10 0.10 2 4 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Evaluated by characterization. |
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