P1604ETF datasheet(2/4 Pages) NIKOSEM

tên linh kiện	P1604ETF

Giải thích chi tiết về linh kiện	P-Channel Logic Level Enhancement

PDF	4 Pages

Scroll/Zoom	100%

nhà sản xuất	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Trang chủ	http://www.niko-sem.com

Logo

2 / 4 page

P-Channel Logic Level Enhancement

Mode Field Effect Transistor

P1604ETF

TO-220F

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.2

May-04-2011

Drain-Source On-State

Resistance

RDS(ON)

VGS = -7V, ID = -15A

mΩ

VGS = -10V, ID = -25A

Forward Transconductance

gfs

VDS = -10V, ID = -25A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -20V, f = 1MHz

2310

Output Capacitance

Coss

438

Reverse Transfer Capacitance

Crss

320

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

4.3

Total Gate Charge

VDS = 0.5V(BR)DSS, VGS = -10V,

ID = -25A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

VDS = -20V

Turn-Off Delay Time

td(off)

ID ≅ -25A, VGS = -10V, RGS = 6Ω

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-40

Forward Voltage

VSD

IF = -25A, VGS = 0V

1.3

Reverse Recovery Time

trr

IF = -25A, dlF/dt = 100A / µS

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.

2Independent of operating temperature.

P1604ETF bảng dữ liệu(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

P1604ETF bảng dữ liệu(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL