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STM32L4P5CEU3P bảng dữ liệu(PDF) 181 Page - STMicroelectronics

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STM32L4P5CEU3P bảng dữ liệu(HTML) 181 Page - STMicroelectronics

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STM32L4P5xx
Electrical characteristics
277
6.3.6
Wakeup time from low-power modes and voltage scaling
transition times
The wakeup times given in Table 52 are the latency between the event and the execution of
the first user instruction.
The device goes in low-power mode after the WFE (wait for event) instruction.
Table 52. Low-power mode wakeup timings(1)
Symbol
Parameter
Conditions
Typ
Max
Unit
tWUSLEEP
Wakeup time
from Sleep
mode to Run mode
-6
7.8
Nb of
CPU
cycles
tWULPSLEEP
Wakeup time
from Lowpower
sleep
mode to Lowpower
run mode
Wakeup in Flash with Flash in power-down
during low-power sleep mode (SLEEP_PD=1
in FLASH_ACR) and with clock MSI = 2 MHz
79
tWUSTOP0
Wake up time
from Stop 0
mode to Run
mode in Flash
range1
Wakeup clock MSI = 48 MHz
9
9.7
μs
Wakeup clock HSI16 = 16
MHz
8.3
8.9
range2
Wakeup clock MSI = 24 MHz 18.6
19.5
Wakeup clock HSI16 = 16
MHz
17.5
18.2
Wakeup clock MSI = 4 MHz
23.7
26.4
Wake up time
from Stop 0
mode to Run
mode in SRAM1
range1
Wakeup clock MSI = 48 MHz
1.8
2.5
Wakeup clock HSI16 = 16
MHz
2.5
2.8
range2
Wakeup clock MSI = 24 MHz
2.4
3.1
Wakeup clock HSI16 = 16
MHz
2.5
2.9
Wakeup clock MSI = 4 MHz
9.2
11.4



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