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TP65H015G5WS bảng dữ liệu(PDF) 4 Page - Renesas Technology Corp

tên linh kiện TP65H015G5WS
Giải thích chi tiết về linh kiện  650V SuperGaN® FET in TO-247-3 (source tab)
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nhà sản xuất  RENESAS [Renesas Technology Corp]
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TP65H015G5WS Datasheet
R07DS1669EU0400 Rev.4.00
Nov 25, 2025
Page 4
2. Specifications
2.1
Absolute Maximum Ratings
Tc = 25°C unless otherwise stated.
Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such
conditions can adversely impact product reliability and result in failures not covered by warranty.
Symbol
Parameter
Limit Value
Unit
VDSS
Drain to source voltage (TJ = -55°C to 150°C)
650
V
VDSS(TR)
Transient drain to source voltage [1]
725
VGSS
Gate to source voltage
±20
PD
Maximum power dissipation at TC = 25°C
266
W
ID
Continuous drain current at TC = 25°C
99
A
Continuous drain current at TC = 100°C
62
A
IDM
Pulsed drain current (pulse width: 10µs)
600
A
TJ
Operating temperature junction
-55 to +150
°C
TS
Storage temperature
-55 to +150
°C
TSOLD
Reflow soldering temperature [3]
260
°C
1.
In off-state, spike duty cycle D< 0.01, spike duration < 1µs
2.
For 10 sec., 1.6mm from the case.
2.2
Thermal Specifications
Symbol
Condition
Typical Value
Unit
RΘJC
Junction-to-case
0.47
°C/W
RΘJA
Junction-to-ambient
40



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