28F320C3 datasheet(39/68 Pages) INTEL

39 / 68 page

Intel£ Advanced+ Boot Block Flash Memory (C3)

Datasheet

8.0

AC Characteristics

8.1

AC Read Characteristics

Table 13. Read Operations—8 Mbit Density

#Sym

Parameter

Density

8 Mbit

Unit

Product

90 ns

110 ns

VCC

3.0V –3.6 V

2.7 V – 3.6V

3.0V –3.6 V

2.7 V – 3.6V

Note

Min

Max

Min

Max

Min

Max

Min

Max

tAVAV

Read Cycle Time

3,4

100

110

tAVQV

Address to Output Delay

3,4

100

110

tELQV

CE# to Output Delay

1,3,4

100

110

tGLQV

OE# to Output Delay

1,3,4

tPHQV

RP# to Output Delay

3,4

150

tELQX

CE# to Output in Low Z

2,3,4

tGLQX

OE# to Output in Low Z

2,3,4

tEHQZ

CE#toOutput inHighZ

2,3,4

tGHQZ

OE#toOutput inHighZ

2,3,4

R10

tOH

Output Hold from

Address, CE#, or OE#

Change, Whichever

Occurs First

2,3,4

NOTES:

1. OE#may be delayeduptotELQV–tGLQV after the falling edge of CE# without impact on tELQV.

2. Sampled, but not 100% tested.

3. See Figure 8, “Read Operation Waveform” on page 42.

4. See Figure 11, “AC Input/Output Reference Waveform” on page 49 for timing measurements and maximum allowable input

slew rate.

28F320C3 bảng dữ liệu(PDF) 39 Page - Intel Corporation

28F320C3 bảng dữ liệu(HTML) 39 Page - Intel Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68

bảng dữ liệu tải về

Link URL