Electrical Characteristics (at Ta=25°C unless otherwise noted)

Page 2

Comchip Technology CO., LTD.

Units

Symbol

Parameter

Typ

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICES

hFE

-80

-80

-4

100

100

V

V

V

µA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

DC current gain

Transition frequency

Min

Max

Conditions

VCE(sat)

VBE(on)

-0.25

-1.2

MHz

Collector-emitter saturation voltage

Base-emitter saturation voltage

IC = -100µA, IE = 0

IC = -1.0mA, IB = 0

IE = -100µA, IC = 0

IE = 0, VCB = -80V

IB = 0, VCE = -60V

VCE = -1V, IC = -10mA

IC = -100mA, IB = -10mA

-0.1

-0.1

µA

V

V

hFE

fT

50

VCE = -1V, IC = -100mA

IC = -100mA, VCE = -1V

IC = -100mA, VCE = -1V, f = 100MHz

Rating and Characteristic Curves (AMMBTA56-HF)

Fig.1 - Static Characteristic

Collector-Emitter Voltage, -VCE (V)

0

1

2

4

5

6

0

40

80

120

160

Fig.2 - hFE ― IC

Collector Current, -IC (mA)

3

100

500

1000

10

10

100

3

REV:A

General Purpose Transistor

Fig.3 - VCEsat ― IC

0.1

1

10

500

1

10

100

1000

Fig.4 - VBE ― IC

Base-Emitter Voltage, -VBE (V)

0

0.6

1

0.4

100

Common

Emitter

Ta= 25°C

IB= -80µA

-160µA

-240µA

-320µA

-400µA

-480µA

-560µA

-640µA

-720µA

-800µA

Ta=25°C

Ta=100°C

Common

Emitter

VCE= -1V

Collector Current, -IC (mA)

Ta=25°C

Ta=100°C

ꞵ=10

0.2

0.8

0.1

10

100

1

Ta=25°C

Ta=100°C

VCE= -1V

AQW-JTR61