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F40C40CT bảng dữ liệu(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

tên linh kiện F40C40CT
Giải thích chi tiết về linh kiện  40.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers
PDF  2 Pages
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nhà sản xuất  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Trang chủ  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

F40C40CT bảng dữ liệu(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  F40C40CT Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. F40C40CT Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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Features
TO-220AB/TO-220-3L
Unit:inch(mm)
※
ThinkiSemi latest&matured process FRD/FRED
※
Low forward voltage drop
※
High current capability
※
Low reverse leakage current
※
Low reverse leakage current
※
High surge current capability
Application
※
Automotive Inverters and Solar Inverters
※
Car Audio Amplifiers and Sound Device Systems
※
Plating Power Supply,Motor Control,UPS and SMPS etc.
Mechanical Data
※
Case: Heatsink open metal TO-220AB/TO-220-3L package
※
Epoxy: UL 94V-0rateflame retardant
※
Epoxy: UL 94V 0 rate flame retardant
※
Terminals: Solderable per MIL-STD-202 method 208
※
Polarity: As marked on diode body
※
Mounting position: Any
※
Weight: 2.0 gram approximately
F40C20CT thru F40C120CT
Pb Free Plating Product
F40C20CT thru F40C120CT
Pb
40.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers
Positive
Negative
Common Cathode
Case
Case
Common Anode
Doubler
Case
Doubler Polarity
Case
Series
Series Connection
Prefix "F40A"
Prefix "F40D"
Prefix "F40S"
Prefix "F40C"
.196(5.00)
.054(1.39)
.038(0.96)
.419(10.66)
.139(3.55)
MIN
.163(4.16)
.045(1.15)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
.387(9.85)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
UNIT
VRRM
200
400
600
800
1000
1200
V
VRMS
140
280
420
560
700
840
V
VDC
200
400
600
800
1000
1200
V
IF(AV)
A
IFSM
A
VF
(Typical)
IR
μA
μA
Trr
nS
CJ
pF
RθJC
℃
/W
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Typical Junction Capacitance (Note 2)
200
Typical Thermal Resistance (Note 3)
1.5
Operating Junction and Storage
Temperature Range
-55 to +175
Maximum Reverse Recovery Time (Note1)
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125℃
(Total Device 2x20.0A=40.0A)
40.0
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
400
Maximum Instantaneous Forward Voltage
@20.0A(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
5.0
500
1.40-1.80
F40C20CT
F40C40CT
F40C60CT
F40C80CT F40C100CT F40C120CT
35-50
50-75
0.90-1.10
1.10-1.40
1.40-1.80
V
F40C30CT
© Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/2
Edition:20210604-V2


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