5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VCC_PA

PA supply voltage

No RF

4.5

V

VCC

VCC pin supply voltage

No RF

4.5

V

Input RF level

ANT, RX mode

10

dBm

LNA_IN

10

PA_IN

16

Digital control logic pins

−0.5

3.6

V

VSWR

ANT voltage standing wave ratio

10:1

-

TJ

Maximum junction temperature

–40

125

°C

Tstg

Storage temperature

–55

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2000

V

Charged device model (CDM), per JEDEC specification JS-002, all pins(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC_PA

PA supply voltage

3.1

3.3

4.25

V

VCC

VCC pin supply voltage

3.1

3.3

4.25

V

TA

Ambient operating air temperature

–40

25

85

°C

5.4 Thermal Information

THERMAL METRIC(1)

TRF2001P

UNIT

VBA (WQFN-FCRLF)

28 PINS

RθJA

Junction-to-ambient thermal resistance

34.0

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

15.5

°C/W

RθJB

Junction-to-board thermal resistance

9.6

°C/W

ΨJT

Junction-to-top characterization parameter

0.1

°C/W

ΨJB

Junction-to-board characterization parameter

9.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

5.5

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

TRF2001P

SLOSEA9 – DECEMBER 2025

www.ti.com

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