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H300N6HT bảng dữ liệu(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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nhà sản xuất  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
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H300N6HT bảng dữ liệu(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Rev.01
Page 2 of 5
(
)
Electrical Characteristics T =25
unless otherwise specified
J
°C
Parameter
V
Unit
V(
)
B R D S S
V
(
)
G S t h
IDSS
Ciss
Symbols
Drain-Source Breakdown Voltage
Gate Threshold Voltage
60
Typ.
Test Conditions
V
=0, I =250u A
G S
D
td(on)
tf
Max.
Min.
V
2.0
4.0
V
=V
, I =250u A
G S
D S
D
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
V
=0, V
=±20V
D S
G S
nA
±100
295
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
9000
4170
pF
V
=0
G S
V
=25V
D S
f=100kHz
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
28
21
65
32
ns
V
=30V
D S
10V
V
=
G S
I =100A
D
2Ω
R
=
G ( e x t )
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
135
40
31
nC
V
=30V
D S
10V
V
=
G S
I =100A
D
μA
V
=60V, V
=0,T =25°C
D S
G S
J
1
Body Diode Characteristics
Parameter
Unit
VSD
Symbols
Diode Forward Voltage
Typ.
Test Conditions
V
=0, I =50A
G S
S
Max.
V =30V
R
I =100Α
S
di/dt=100A/μs
ns
nC
88
Qrr
Reverse Recover Time
Reverse Recovery Charge
154
Min.
V
R
(
)
D S o n
Drain-Source On-State Resistance
1.3
1.7
mΩ
V
=10V, I =50A,T =25°C
G S
D
J
IGSS
Gate resistance
RG
2.4
f = 1 MHz, Open drain
Ω
Coss
Crss
Gate plateau voltage
Vplateau
5.0
V
Qg
Qgs
Qgd
tr
td(off)
1.3
A
Irrm
Peak reverse recovery current
3.2
trr
Note
( )
1 Calculated continuous current based on maximum allowable junction temperature.
( )
2 Repetitive rating; pulse width limited by max. junction temperature.
( )
3 Pd is based on max. junction temperature, using junction-case thermal resistance.
( )
4 V
=50V,V
=10 V, L=0.3 mH, starting T =25 °C
D D
G S
J



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