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OP249GS bảng dữ liệu(PDF) 3 Page - Analog Devices

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OP249GS bảng dữ liệu(HTML) 3 Page - Analog Devices

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OP249
Rev. F | Page 3 of 20
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = ±15 V, TA = 25°C, unless otherwise noted.
Table 1.
OP249A
OP249F
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
Offset Voltage
VOS
0.2
0.5
0.2
0.7
mV
Long Term Offset Voltage1
VOS
0.8
1.0
mV
Offset Stability
1.5
1.5
μV/month
Input Bias Current
IB
VCM = 0 V, TA = 25°C
30
75
30
75
pA
Input Offset Current
IOS
VCM = 0 V, TA = 25°C
6
25
6
25
pA
Input Voltage Range2
IVR
12.5
12.5
V
±11
±11
V
−12.5
–12.5
V
Common-Mode Rejection
CMR
VCM = ±11 V
80
90
80
90
dB
Power-Supply Rejection Ratio
PSRR
VS = ± 4.5 V to ±18 V
12
31.6
12
50
μV/V
Large Signal Voltage Gain
AVO
VO = ±10 V, RL = 2 kΩ
1000
1400
500
1200
V/mV
Output Voltage Swing
VO
RL = 2 kΩ
12.5
12.5
V
±12.0
±12.0
V
−12.5
–12.5
V
Short-Circuit Current Limit
ISC
Output shorted to
ground
36
36
mA
±20
±50
±20
±50
mA
−33
–33
mA
Supply Current
ISY
No load, VO = 0 V
5.6
7.0
5.6
7.0
mA
Slew Rate
SR
RL = 2 kΩ, CL = 50 pF
18
22
18
22
V/μs
Gain Bandwidth Product3
GBW
3.5
4.7
3.5
4.7
MHz
Settling Time
tS
10 V step 0.01%4
0.9
1.2
0.9
1.2
μs
Phase Margin
ΘM
0 dB gain
55
55
Degrees
Differential Input Impedance
ZIN
1012||6
1012||6
Ω||pF
Open-Loop Output Resistance
RO
35
35
Ω
Voltage Noise
en p-p
0.1 Hz to 10 Hz
2
2
μV p-p
Voltage Noise Density
en
fO = 10 Hz
75
75
nV/√Hz
fO = 100 Hz
26
26
nV/√Hz
fO = 1 kHz
17
17
nV/√Hz
fO = 10 kHz
16
16
nV/√Hz
Current Noise Density
in
fO = 1 kHz
0.003
0.003
pA/√Hz
Voltage Supply Range
VS
±4.5
±15
±18
±4.5
±15
±18
V
1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent wafer lots at 125°C with LTPD of three.
2 Guaranteed by CMR test.
3 Guaranteed by design.
4 Settling time is sample tested.



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