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FPD200 bảng dữ liệu(PDF) 2 Page - Filtronic Compound Semiconductors

tên linh kiện FPD200
Giải thích chi tiết về linh kiện  GENERAL PURPOSE PHEMT DIE
PDF  4 Pages
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nhà sản xuất  FILTRONIC [Filtronic Compound Semiconductors]
Trang chủ  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD200 bảng dữ liệu(HTML) 2 Page - Filtronic Compound Semiconductors

  FPD200 Datasheet HTML 1Page - Filtronic Compound Semiconductors FPD200 Datasheet HTML 2Page - Filtronic Compound Semiconductors FPD200 Datasheet HTML 3Page - Filtronic Compound Semiconductors FPD200 Datasheet HTML 4Page - Filtronic Compound Semiconductors  
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
2
Datasheet v3.0
FPD200
ABSOLUTE MAXIMUM RATING
1:
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Drain-Source Voltage
VDS
-3V < VGS < -0.5V
6
8V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3V
Drain-Source Current
IDS
For VDS < 2V
IDSS
Gate Current
IG
Forward or reverse current
10mA
RF Input Power
PIN
Under any acceptable bias state
20dBm
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-65°C to 150°C
Total Power Dissipation
PTOT
See De-Rating Note below
0.5W
Gain Compression
Comp.
Under any bias conditions
5dB
Simultaneous Combination of Limits
4
2 or more Max. Limits
80%
Notes:
1T
Ambient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2Total Power Dissipation defined as: P
TOT ≡ (PDC + PIN) – POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
3Total Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 500mW - (3.6mW/°C) x THS
where THS= heatsink or ambient temperature above 22°C
Example: For a 85
°C carrier temperature: P
TOT = 500 - (3.6mW x (85 – 22)) = 0.27W
4Users should avoid exceeding 80% of 2 or more Limits simultaneously
5 Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
6 Operating at absolute maximum VD continuously is not recommended. If operation at 8V is considered then IDS
must be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted
to < -0.5V.
PAD LAYOUT:
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening
PAD
DESCRIPTION
PIN
COORDINATES
(µm)
A
Gate Pad
90, 200
B
Drain Pad
320, 200
C1/C2
Source Pad
200, 290/110
C1
B
A
C2
DIE SIZE
(
µm)
DIE THICKNESS (
µm)
MIN. BOND PAD OPENING
(
µm x µm )
400 x 400
75
70 x 80



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