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STM32L433CB bảng dữ liệu(PDF) 97 Page - STMicroelectronics

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DS11449 Rev 7
97/19
STM32L433xx
Electrical characteristics
194
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 23 are derived from tests performed under the ambient
temperature condition summarized in Table 22.
The requirements for power-up/down sequence specified in Section 3.9.1: Power supply
schemes must be respected.
6.3.3
Embedded reset and power control block characteristics
The parameters given in Table 24 are derived from tests performed under the ambient
temperature conditions summarized in Table 22: General operating conditions.
Table 23. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
-
0
µs/V
VDD fall time rate
10
tVDDA
VDDA rise time rate
-
0
VDDA fall time rate
10
tVDDUSB
VDDUSB rise time rate
-
0
VDDUSB fall time rate
10
Table 24. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
tRSTTEMPO(2)
Reset temporization after
BOR0 is detected
VDD rising
-
250
400
μs
VBOR0(2)
Brown-out reset threshold 0
Rising edge
1.62
1.66
1.7
V
Falling edge
1.6
1.64
1.69
VBOR1
Brown-out reset threshold 1
Rising edge
2.06
2.1
2.14
V
Falling edge
1.96
2
2.04
VBOR2
Brown-out reset threshold 2
Rising edge
2.26
2.31
2.35
V
Falling edge
2.16
2.20
2.24
VBOR3
Brown-out reset threshold 3
Rising edge
2.56
2.61
2.66
V
Falling edge
2.47
2.52
2.57
VBOR4
Brown-out reset threshold 4
Rising edge
2.85
2.90
2.95
V
Falling edge
2.76
2.81
2.86
VPVD0
Programmable voltage
detector threshold 0
Rising edge
2.1
2.15
2.19
V
Falling edge
2
2.05
2.1
VPVD1
PVD threshold 1
Rising edge
2.26
2.31
2.36
V
Falling edge
2.15
2.20
2.25



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