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RF2722 bảng dữ liệu(PDF) 9 Page - RF Micro Devices

tên linh kiện RF2722
Giải thích chi tiết về linh kiện  GSM/GPRS/EDGE RECEIVER
PDF  26 Pages
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nhà sản xuất  RFMD [RF Micro Devices]
Trang chủ  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2722 bảng dữ liệu(HTML) 9 Page - RF Micro Devices

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RF2722
Proposed
Rev A4 DS050919
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
DC Offset Correction
Residual DC Error
-20
+20
mV
Following DC offset correction. Differential
measurement.
DC Correction Time
20
μs
DC Offset Drift Referred to the LNA
Input
-126
dBm
Max gain measured in a window 150
μs to
730
μs after RXEN is activated.
CLK IN Frequency
26
MHz
CLKF=0
TX Buffer
Low Band
Input Power
3
6
dBm
Saturated Output Power
6.6
7.7
8.8
dBm
PIN=+4dBm
Output Power Variation
-1.1
1.1
dB
DC Current Drain
5.2
7.2
9.3
mA
DC with no RF input
RF Current Drain
14
19.5
25
mA
PIN=+4dBm
Phase Noise
-167
dBc/Hz
20MHz offset
Input VSWR
3:1
PIN=+4dBm
Output VSWR
2:1
PIN=+4dBm
Load VSWR
3:1
PIN=+4dBm
Reverse Isolation
20
dB
TXEN=H
Forward Isolation
20
dB
TXEN=L
High Band
Input Power
3
6
dBm
Saturated Output Power
4.9
6.5
8.1
dBm
PIN=+4dBm
Output Power Variation
-1.6
1.6
dB
DC Current Drain
8
11
13.8
mA
DC with no RF input
RF Current Drain
18
24.5
32
mA
PIN=+4dBm
Phase Noise
-160
dBc/Hz
Input VSWR
3:1
PIN=+4dBm
Output VSWR
2:1
PIN=+4dBm
Load VSWR
3:1
PIN=+4dBm
Reverse Isolation
35
dB
TXEN=H
Forward Isolation
28
dB
TXEN=L



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