Silicon NPN Power Transistor

BUR52A

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA, IB= 0A

250

--

--

V

ICEO

Collector-Emitter Cutoff Current

VCE= 250V, IB= 0A

--

--

1.0

mA

ICBO

Collector-Base Cutoff Current

VCE= 350V, IB= 0A

--

--

0.2

mA

IEBO

Emitter-Base Cutoff Current

VEB= 7V, IC= 0A

--

--

0.2

mA

hFE1

DC Current Gain

IC= 5A, VCE= 4V

20

--

100

hFE2

DC Current Gain

IC= 40A, VCE= 4V

15

--

--

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 25A, IB= 2A

--

--

1.0

V

IC= 40A, IB= 4A

--

--

1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 25A, IB= 2A

--

--

1.8

V

IC= 40A, IB= 4A

--

--

2.0

V

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

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