Comchip Technology CO., LTD.

Page 2

REV:A

AQW-JTR84

General Purpose Transistor

Symbol

Parameter

Conditions

Min

Max

Unit

Electrical Characteristics (at TA=25°C unless otherwise noted)

Collector-base breakdown voltage

IC = -100μA, IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain (Note 1)

Transition frequency

Output capacitance

IC = -10mA, IB = 0

IE = -100μA, IC = 0

VCB = -35V, IE = 0

VCE = -2V, IC = -100mA

IC = -0.1A, IB = -10mA

VCE = -10V, IC = -50mA, f = 100MHZ

VCB = -10V, f = 1MHZ

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE(1)

VCE(sat)

fT

Cob

V

V

V

µA

µA

V

MHZ

P

F

VCE = -2V, IC = -1A

hFE(2)

IC = -1.5A, IB = -75mA

VBE(sat)

V

Typ

Emitter cut-off current

VEB = -4V, IC = 0

IEBO

VCE = -2V, IC = -1.5A

hFE(3)

VCE = -2V, IC = -3A

hFE(5)

IC = -1A, IB = -50mA

VCE(sat)

IC = -1.5A, VCE = -2V

VBE(on)

V

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

VCE = -2V, IC = -10mA

hFE(4)

IC = -1.5A, IB = -100mA

VCE(sat)

t(on)

t(off)

Turn-on time

Turn-off time

-40

-40

-5

-95

-85

-8.8

-0.1

-0.1

300

480

300

450

180

290

60

130

12

22

0.025

0.040

0.150

0.220

0.245

0.330

-1.2

150

190

-1.0

-0.8

19

25

40

435

VCC = -15V, IC = -0.75A, IB1 = IB2 = -15mA