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Comchip Technology CO., LTD.

General Purpose Transistor

AQW-JTR74

Electrical Characteristics (Ta=25°C, unless otherwise specified)

Typical Rating and Characteristic Curves (ABCP54-16-HF)

Symbol

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Conditions

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IC = 100µA, IE = 0

IC = 10mA, IB = 0

IE = 10μA, IC = 0

VCB = 30V, IE = 0, TA = 25°C

45

5

100

Min.

Max.

V

V

V

nA

DC current gain

hFE

VCE = 2V, IC = 5mA

20

Collector-emitter saturation voltage

VCE(sat)

IC = 500mA, IB = 50mA

0.5

V

Base-emitter voltage

VBE(on)

IC = 0.5A, VCE = 2V

1

V

Transition frequency

fT

VCE = 10V, IC = 50mA, f = 20MHz

100

MHz

Parameter

45

Fig.1 - hFE ― IC

Collector-Emitter Saturation Voltage, VCE(sat) (V)

1

10

100

10000

0

10

100

1000

1000

Fig.2 - VCE(sat) ― IC

Collector Current, IC (mA)

0.2

100

1000

0.4

0.6

1

25

µA

VCB = 30V, IE = 0, TA = 150°C

100°C

25°C

-50°C

10

VCE= 2V

25°C

IC/IB= 10

250

VCE = 2V, IC = 150mA

100

hFE

REV:C