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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
PWR SEN
BIAS GND1
RF IN
NC
PWR REF
RF OUT
RF OUT
RF OUT
16
15
14
13
5
6
7
8
9
10
11
12
4
3
2
1
Bias
RF5117C
3V, 1.8GHz TO 2.8GHz
LINEAR POWER AMPLIFIER
The RF5117C is a linear, medium-power, high-efficiency amplifier IC
designed specifically for battery-powered WLAN applications such as PC
cards, mini PCI, and compact flash applications. The device is manufac-
tured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor
(HBT) process, and has been designed for use as the final RF amplifier in
2.5GHz WLAN and other spread-spectrum transmitters. The device is pro-
vided in a 3mmx3mm, 16-pin, leadless chip carrier with a backside
ground. The RF5117C is designed to maintain linearity over a wide range
of supply voltage and power output.
Features
Single 3.3V Power Supply
+30dBm Saturated Output
Power
26dB Small Signal Gain
High Linearity
1800MHz to 2800MHz Fre-
quency Range
+17dBm PO, 11G, <3% EVM
Applications
IEEE802.11B WLAN Applica-
tions
IEEE802.11G WLAN Applica-
tions
2.5GHz ISM Band Applica-
tions
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
Spread-Spectrum and MMDS
Systems
RF5117C
3V, 1.8GHz to 2.8GHz Linear Power Amplifier
RF5117C PCBA
Fully Assembled Evaluation Board
Rev A6 DS071018
Package Style: QFN, 16-Pin, 3 x 3
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