December 2015

©2011 Fairchild Semiconductor Corporation

FDMS8018 Rev.1.2

www.fairchildsemi.com

1

FDMS8018

N-Channel PowerTrench® MOSFET

30 V, 175 A, 1.8 m

Ω

Features

Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A

Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A

Advanced Package and Silicon Combination for Low rDS(on)

and High Efficiency

Next Generation Enhanced Body Diode Technology, Engi-

neered for Soft Recovery

MSL1 Robust Package Design

100% UIL Tested

RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers.It has been optimized

for low gate charge, low rDS(on), fast switching speed ang body

diode reverse recovery performance.

Applications

VRM Vcore Switching for Desktop and Server

OringFET / Load Switching

DC-DC Conversion

Motor Bridge Switch

Power 56

D

D

D

D

G

S

S

S

Pin 1

Bottom

Top

Pin 1

D

D

D

D

S

S

S

G

MOSFET Maximum Ratings T

A = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

30

V

VGS

Gate to Source Voltage

(Note 4)

±20

V

ID

Drain Current -Continuous

TC = 25 °C

(Note 6)

175

A

-Continuous

TC = 100 °C

(Note 6)

110

-Continuous

TA = 25 °C

(Note 1a)

30

-Pulsed

(Note 5)

680

EAS

Single Pulse Avalanche Energy

(Note 3)

126

mJ

PD

Power Dissipation

TC = 25 °C

83

W

Power Dissipation

TA = 25 °C

(Note 1a)

2.5

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

1.5

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS8018

FDMS8018

Power 56

13 ’’

12 mm

3000 units