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DDS39RF10ACL bảng dữ liệu(PDF) 7 Page - Texas Instruments

tên linh kiện DDS39RF10ACL
Giải thích chi tiết về linh kiện  DDS39RF10 and DDS39RFS10, 10.24GSPS to 20.48GSPS Dual and Single Channel, Multi-Nyquist Direct Digital Synthesizer (DDS)
PDF  175 Pages
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nhà sản xuất  TI2 [Texas Instruments]
Trang chủ  https://www.ti.com
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DDS39RF10ACL bảng dữ liệu(HTML) 7 Page - Texas Instruments

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
Supply voltage range
Supply voltage range, VDDA18A, VDDA18B(2)
-0.3
2.45
V
Supply voltage range, VEEAM18, VEEBM18(2)
-2.0
0.3
V
Supply voltage range, VDDCLK18, VDDSYS18(3)
-0.3
2.45
V
Supply voltage range, VDDLB, VDDLA,
VDDCLK10(3)
-0.3
1.3
V
Supply voltage range, VDDIO, VQPS, VDDR18(4)
-0.3
2.45
V
Supply voltage range, VDDDIG, VDDEB, VDDEA,
VDDT(4)
-0.3
1.3
V
Voltage between any combination of
AGND, DGND and VSSCLK
Voltage between any combination of AGND,
DGND and VSSCLK
-0.1
0.1
V
Voltage applied to input pins
CLK+, CLK–, SYSREF+, SYSREF-(3)
-0.3
VDDCLK18+0.3
V
6SRX-/+, 14SRX-/+ AC Voltage
1.6
6SRX-/+, 14SRX-/+ DC Voltage to GND
-5
5
SCLK, SCS, SDI, RESET, SYNC, SCANEN,
TXEN[0:1], FRDI[0:3], FRCLK, FRCS, SYNC (4)
-0.3
VDDIO+0.3
EXTREF(2)
-0.3
VDDA18A + 0.3
Voltage at output pins
DACOUTA+, DACOUTA-(2)
-0.3
VDDA18A + 0.5
V
DACOUTB+, DACOUTB-(2)
-0.3
VDDA18B + 0.5
ATEST, RBIAS-/+(2)
-0.5
VDDA18B + 0.3
SDI, SDO, ALARM(4)
-0.5
VDDIO + 0.3
Peak input current (any input)
-20
20
mA
Peak total input current (sum of absolute value of all currents forced in or out,
not including power supply current and DACOUTA+, DACOUTA–, DACOUTB+ and
DACOUTB–)
30
mA
Junction temperature, TJ
150
°C
Storage temperature, Tstg
-65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2)
Measured to AGND.
(3)
Measured to VSSCLK.
(4)
Measured to DGND.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/
ESDA/JEDEC JS-001, all pins(1)
1000
V
Charged device model (CDM), per ANSI/
ESDA/JEDEC JS-002, all pins(2)
250
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
www.ti.com
DDS39RF10, DDS39RFS10
SBASB20 – SEPTEMBER 2024
Copyright © 2025 Texas Instruments Incorporated
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Product Folder Links: DDS39RF10 DDS39RFS10



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